Samsung Starts EUV Use for 7LPP at S3

October 18, 2018 CritMat Admin

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Fab Technology, PhotoR and Ancil. Alerts7LLP, 7N, 7nm-node, ancillary, critical materials, electronic materials supply chain, EUV, extreme ultraviolet, foundry, high volume manufacturing, Hwaseong, IC fabrication, lithography, logic fab, manufacturing capacity, multiple patterning, node, patterning, photoresist, process technology, S3, Samsung Electronics, SOH, South Korea, spin-on hardmask, strategic investment, wafer fab

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